Beilstein J. Nanotechnol.2015,6, 2252–2262, doi:10.3762/bjnano.6.231
General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganov St. 9/1, 220072 Minsk, Belarus 10.3762/bjnano.6.231 Abstract The photoelectrochemical properties of nanoheterostructures based on the widebandgapoxide substrates (ZnO, TiO2, In2O3) and CdS nanoparticles deposited by the
; semiconductor photoelectrochemistry; widebandgapoxide; Introduction
Quantum dot sensitized solar cells (QDSSCs) utilize light absorbed by semiconductor nanoparticles (CdS, CdSe, CdTe, PbS, etc.) deposited on widebandgapoxide (WBGO) scaffolds (TiO2, ZnO, In2O3) which act as a photoanode [1][2][3][4][5][6
with a systematic comparison of Raman spectra for the SILAR-grown NPs illustrating their dependence on the number of SILAR cycles and the widebandgapoxide substrate used.
Results and Discussion
SEM, BET, and XRD studies of ZnO, TiO2, and In2O3 electrodes
Top and cross-sectional scanning electron
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Figure 1:
SEM images of In2O3 mesoporous films (a,d), ZnO platelet crystallites (b,e) and anodic TiO2 nanotub...
Beilstein J. Nanotechnol.2013,4, 306–317, doi:10.3762/bjnano.4.34
investigated by modification of the surface of the nanophosphors. Stable oxides may be considered as a suitable solution for such a coating. In principle, two options may be considered in the present context. A coating with a wide-band-gapoxide material, such as Al2O3, could passivate the surface and confine
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Figure 1:
CVR chamber consisting of precursor sources, reaction zone and thermophoretic powder-collection sys...